WiPDA

The 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2019)
Posted: 2019-2-28

The 7th Annual IEEE / PMSA Workshop on Wide Bandgap Power Devices and Applications (WiPDA) [www.wipda.org ] will be held in Raleigh, North Carolina from October 29 to 31, 2019. This annual event provides engineers and scientists with opportunities to share their expertise in wide bandgap (WBG) semiconductor technology. This year's workshop features tutorials on October 29, 2019.  The following two days will host keynote sessions, panel sessions, technical sessions, and a poster session that covers four technical tracks: silicon carbide (SiC) devices, SiC applications, gallium nitride (GaN) devices, and GaN applications.  Topics in emerging WBG materials will also be solicited.

There will be many opportunities to network with leading WBG specialists in industry and academia, especially at the Industry and Sponsors Exhibition, which occurs simultaneously with the workshop.  A banquet is planned for October 30, 2019.

The workshop is brought to you by the IEEE Power Electronics Society (PELS), the Power Sources Manufacturer's Association (PSMA), and the IEEE Electron Devices Society (EDS).  The General Chair is Victor Veliadis, Chief Technical Officer and Deputy Executive Director of PowerAmerica and Professor of Electrical and Computer Engineering at North Carolina State University (NCSU).  He is supported by Vice Chair Jin Wang, Co-Director for the Center for High Performance Power Electronics (CHPPE) and Professor of Electrical and Computer Engineering at The Ohio State University (OSU).

Important Dates (Tentative):

  • June 14, 2019: Abstract submission deadline.
  • July 19, 2019: Notification of the abstract.
  • August 23, 2019: Paper submission deadline for workshop proceedings.

Call for Abstracts and Tutorials:

The abstract submission portal will open mid spring to accept authors' manuscripts.  Researchers are encouraged to submit their latest findings on fabrication of WBG power devices, their insertion in power electronics circuits/systems, and on technology of SiC, GaN, and other emerging, high performance WBG power semiconductors.

Additionally, tutorial proposals will be solicited from experts that can provide in-depth discussions on WBG power semiconductor materials, devices, and their applications in power electronics, circuits and systems.

Authors and speakers are encouraged to submit their latest research findings in this WiPDA world-renown symposium. For both abstracts and tutorials proposals, the technical topics of interest include:

  • Heteroepitaxial & Bulk Materials Growth
  • Gate Dielectrics & Surface Passivation
  • Device Structures & Fabrication Techniques
  • Device Characterization & Modeling
  • Very-High Efficiency Or Compact Converters
  • Safe Operating Areas Of Wide Bandgap Devices, Including Short Circuit, Spike, &Transient Tolerance
  • Harsh Environment (High Temperature) Operation & Reliability
  • Packaging Power Modules & ICs
  • Hard-Switched & Soft-Switched Application Analysis
  • Gate Drive & Other Auxiliary Circuits
  • High-Performance Passive Components
  • Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
  • We look forward to seeing you this fall in Raleigh, North Carolina, USA.

Provided by Mark Scott
WiPDA 2019 Publicity Chair

 
 

 

 

The 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018)
Posted: 2018-12-11

Over two hundred people from around the world participated in the 2018 IEEE / PSMA Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018).  This year's event was held from October 31 to November 2 on the campus of the Georgia Institute of Technology in Atlanta, Georgia.  The highlights included: seven tutorials; a meeting of JEDEC's newest committee, JC-70; a workshop for the International Technology Roadmap on Wide Bandgap Semiconductors (ITRW); and two days of technical discussions.

A major theme of WiPDA 2018 was the reliability of silicon carbide (SiC) and gallium nitride (GaN) power devices.  One tutorial and a keynotes address focused exclusively on this topic. Many others presenters also included it amongst their talks.  Both panel sessions addressed this issue; one covering SiC components and the other GaN devices.  Additionally, two technical sessions explored reliability as well as some of the poster presentations.

The reliability theme also included participation from JEDEC.  According to Dr. Stephanie Watts Butler, chairperson for the JC-70 Committee:

JEDEC's JC-70 Wide Bandgap (WBG) power semiconductor standards committee celebrated its first anniversary at WiPDA 2018.   The committee has more than doubled in size since its inaugural meeting at WiPDA 2017 with more than 50 member companies including industry leaders in power GaN and SiC semiconductors as well as prospective users of WBG power semiconductors and T&M equipment manufacturers.   Global multinational corporations and technology startups from the US, Europe, and Asia are working together to bring to the industry WBG standards for reliability, testing, and datasheet parametrics.   Guidelines for testing power GaN devices has completed the first major milestone toward becoming a JEDEC publication, and has begun the next step toward being issued by JEDEC.

The ITRW workshop focused on implementing SiC devices in power electronics.  Dr. Victor Veliadis provided an overview of large volume SiC applications.  The utilization of SiC power devices in China's electrical grid was discussed by Dr. Chaobo Dai.  Dr. Kamiar Karimi talked about the benefits of SiC devices for aircraft.  A presentation on using SiC MOSFETs in the Japanese railway system was also given by Dr. Takeshi Oi.


Kijeong Han of North Carolina State University delivers his talk on short circuit failure mechanisms during the SiC Device Fabrication
 
Workshop attendees listen to a presentation during the technical sessions

The 2018 tutorials covered semiconductor technology for GaN, SiC, and ultra-wide bandgap devices.  It included material that focused on fabrication as well as application of these components. Eight keynote speakers and two panel sessions were held with equal emphasis on emerging developments in GaN and SiC.  A total of 44 papers were presented across 11 technical sessions.  Additionally, 11 poster presentations occurred during the evening reception.

The success of WiPDA 2018 was due to the financial support of its sponsors and the dedication of many volunteers.  We would like thank our two Platinum Sponsors, Infineon and Wolfspeed, for their generous contributions towards making such a strong program.  We would also like to acknowledge our Gold Sponsors, Silvaco and Semiprobe; our Tutorial Sponsor, PowerAmerica; our Silver Sponsor, InnoCit; our Media Partner, How2Power.com; and the seven exhibitors that showcased alongside our sponsors.  Furthermore, the workshop would not be possible without the commitment of its Technical Sponsors, Organizing Committee, and Technical Program Committee as well as the paper reviewers and the student volunteers.

Next fall, WiPDA 2019 heads to Raleigh, NC where North Carolina State University and PowerAmerica will host the Workshop.  Until then, have a happy holiday season and safe new year.

WIPDA 2017 Overview
Posted: 2017-12-31

The 5th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA, www.wipda.org), sponsored by IEEE and PSMA, was successfully held from Oct. 30 to Nov. 1, 2017, at the Hyatt Regency Tamaya Resort near Albuquerque, NM.

WIPDA is a fast-growing annual event which provides a forum for device scientists, circuit designers, and application engineers to share technology updates, research findings, development experience, and application knowledge. 
As in past years, WiPDA covered a wide range of topics related to wide-bandgap power electronics, including but not limited to:

  1. Heteroepitaxial and bulk materials growth
  2. Gate dielectrics and surface passivation
  3. Device structures and fabrication techniques
  4. Device characterization and modeling
  5. Very high efficiency and compact converters
  6. SOAs including short-circuit, spike, and transient tolerance
  7. Harsh environment (e.g. high temperature) operation and reliability
  8. Packaging, power modules, and ICs
  9. Hard-switched and soft-switched applications
  10. Common-mode and EMI management
  11. Gate drive and other auxiliary circuits
  12. High-performance passive components
  13. Applications in renewable energy and storage, transportation, industrial drives, and grid power systems

The number of WIPDA attendees has grown quickly over the last five years, with attendees coming from multiple disciplines including materials science, device fabrication, power circuits, and system applications. Over 200 attendees participated in the workshop this year, including representatives from industry, academia, government, and research institutions. Attendees came from the United States as well as numerous other countries. Nine industrial and institutional partners provided support to the conference.

WiPDA 2017 maintained the arrangement from previous years and included tutorials, keynote talks, panel discussions, oral technical sessions, a poster session and banquet, standards meetings, and an exhibition.

 

There were seven tutorials covering both device and application topics, from fundamental knowledge to the frontier research trends. The tutorial speakers were from both academic institutions (Purdue University, North Carolina State University, Virginia Tech, and University of Alabama) and industry (John Deere, Texas Instruments, and Infineon Technologies). The WIPDA 2017 keynote sessions featured eight distinguished speakers from ARPA-E, Navitas Semiconductor, University of Illinois Urbana-Champaign, U.S. Army Research Laboratory, PowerAmerica, Ford, Infineon, and Texas Instruments, who shared their experiences and visions on SiC and GaN development and applications from different angles as the device manufacturer, the equipment designer, the researcher, and the system integrator. Additionally, two panel sessions focused on high-voltage SiC and high-frequency GaN, and included leading experts from US federal agencies, industry, and academia. The technical program consisted of 50 oral presentations and 21 posters, representing 10 countries. Each presentation or poster will be available on IEEE Xplore.

This year's poster session and banquet were held at the Cottonwoods Pavilion, located on the Tamaya grounds along the banks of the Rio Grande River. Further, IEEE's International Technology Roadmap for Wide Bandgap Semiconductors (ITRW) working group met at the workshop. Finally, an exhibition consisting of ten different companies and agencies paticipanted in WIPDA2017.

As in past years, WiPDA again provided student travel grants to encourage student participation in the conference and promote education in the area of wide-bandgap power electronics. 16 students received these awards, out of a total of 60 student participants, supported equally by PELS and PSMA.

WiPDA 2018 will be hosted by Georgia Tech in Atlanta, and is tentatively scheduled for November 5-7, 2018. Please check www.wipda.org for information and updates. We look forward to your participation at next year's exciting event!

Provided by Dr. Fang Luo,
Publicity Chair WiPDA 2017

 

 

 

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