The 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018)
Posted: 2018-12-11

Over two hundred people from around the world participated in the 2018 IEEE / PSMA Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018).  This year's event was held from October 31 to November 2 on the campus of the Georgia Institute of Technology in Atlanta, Georgia.  The highlights included: seven tutorials; a meeting of JEDEC's newest committee, JC-70; a workshop for the International Technology Roadmap on Wide Bandgap Semiconductors (ITRW); and two days of technical discussions.

A major theme of WiPDA 2018 was the reliability of silicon carbide (SiC) and gallium nitride (GaN) power devices.  One tutorial and a keynotes address focused exclusively on this topic. Many others presenters also included it amongst their talks.  Both panel sessions addressed this issue; one covering SiC components and the other GaN devices.  Additionally, two technical sessions explored reliability as well as some of the poster presentations.

The reliability theme also included participation from JEDEC.  According to Dr. Stephanie Watts Butler, chairperson for the JC-70 Committee:

JEDEC's JC-70 Wide Bandgap (WBG) power semiconductor standards committee celebrated its first anniversary at WiPDA 2018.   The committee has more than doubled in size since its inaugural meeting at WiPDA 2017 with more than 50 member companies including industry leaders in power GaN and SiC semiconductors as well as prospective users of WBG power semiconductors and T&M equipment manufacturers.   Global multinational corporations and technology startups from the US, Europe, and Asia are working together to bring to the industry WBG standards for reliability, testing, and datasheet parametrics.   Guidelines for testing power GaN devices has completed the first major milestone toward becoming a JEDEC publication, and has begun the next step toward being issued by JEDEC.

The ITRW workshop focused on implementing SiC devices in power electronics.  Dr. Victor Veliadis provided an overview of large volume SiC applications.  The utilization of SiC power devices in China's electrical grid was discussed by Dr. Chaobo Dai.  Dr. Kamiar Karimi talked about the benefits of SiC devices for aircraft.  A presentation on using SiC MOSFETs in the Japanese railway system was also given by Dr. Takeshi Oi.

Kijeong Han of North Carolina State University delivers his talk on short circuit failure mechanisms during the SiC Device Fabrication
Workshop attendees listen to a presentation during the technical sessions

The 2018 tutorials covered semiconductor technology for GaN, SiC, and ultra-wide bandgap devices.  It included material that focused on fabrication as well as application of these components. Eight keynote speakers and two panel sessions were held with equal emphasis on emerging developments in GaN and SiC.  A total of 44 papers were presented across 11 technical sessions.  Additionally, 11 poster presentations occurred during the evening reception.

The success of WiPDA 2018 was due to the financial support of its sponsors and the dedication of many volunteers.  We would like thank our two Platinum Sponsors, Infineon and Wolfspeed, for their generous contributions towards making such a strong program.  We would also like to acknowledge our Gold Sponsors, Silvaco and Semiprobe; our Tutorial Sponsor, PowerAmerica; our Silver Sponsor, InnoCit; our Media Partner, How2Power.com; and the seven exhibitors that showcased alongside our sponsors.  Furthermore, the workshop would not be possible without the commitment of its Technical Sponsors, Organizing Committee, and Technical Program Committee as well as the paper reviewers and the student volunteers.

Next fall, WiPDA 2019 heads to Raleigh, NC where North Carolina State University and PowerAmerica will host the Workshop.  Until then, have a happy holiday season and safe new year.

The 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018)
Posted: 2018-9-6

The 6th Annual IEEE / PMSA Workshop on Wide Bandgap Power Devices & Applications (WiPDA) will be held in Atlanta, Georgia from October 31 to November 2, 2018. This annual event provides engineers and scientists with opportunities share their experiences with wide bandgap (WBG) semiconductors technology. This year's workshop features seven tutorials, eight keynote sessions, a panel session, 12 technical sessions, and a poster session.  An industry exhibition will also be held all three days.  The workshop takes place at the Georgia Tech Hotel and Conference Center in midtown Atlanta.

The workshop is brought to you by this year's Platinum Sponsor: Infineon Technologies.  Financial support is also provided by the Gold Sponsors, PowerAmericaSemiProbe, and Silvaco, as well as the Silver Sponsor, Innocit LLC.  Additionally, the workshop is supported by the IEEE Power Electronics Society (PELS), the Power Supply Manufacturer's Association (PMSA), and the IEEE Electron Devices Society (EDS).


The tutorials focus on applications and devices in SiC, GaN, and ultra-wide bandgap (UWBG) semiconductors.  Presenters include representatives from industry and academia.  The seven tutorials topics are:

  • SiC Power Device Reliability – by D. A. Gajewski, Wolfspeed.
  • Measurement and Analysis Method of Parasitic Capacitance and Inductance in Power Devices and Power Electronic Circuits – by R. Takeda, Keysight Technologies.
  • Silicon Carbide Power Devices: Making the Transition from Silicon – by V. Veliadis, North Carolina State University.
  • Developing High Power, Medium Voltage Silicon Carbide based Power Electronics – by J. Wang, The Ohio State University; M. Scott, Miami University; H. Cai, Southeast University.
  • Advanced Power Module Packaging: from Design to Validation – F. Luo, D. Huitink, and Y. Peng, University of Arkansas.
  • How to Design High Efficiency and High Density GaN Switching Power Supply – R. Yu, and Q. Huang, University of Texas at Austin.
  • Emerging Ultra-Wide Band Gap (UWBG) Power Electronic Devices – S. Krishnamoorthy, University of Utah.

Technical Program:

Four keynote presentations will be held on November 1st and another four on the November 2nd.  A panel session will held on November 1st. It will be followed by the first round of technical sessions.  A total of 50 oral presentations will be given across 12 technical sessions.  The poster session will be held on the evening of November 1st, and it includes research from 24 teams.  This event will be held in conjunction with the conference banquet.  Day two begins with another round of keynote presentations.  This is followed by three rounds of technical sessions.

The oral and poster presentations cover research topics in the following areas:

  • Heteroepitaxial and Bulk Materials Growth
  • Gate Dielectrics and Surface Passivation
  • Device Structures and Fabrication Techniques
  • Device Characterization and Modeling
  • Very-High Efficiency or Compact Converters
  • Safe Operating Areas of Wide Bandgap Devices
  • Harsh Environment (High Temperature) Operation and Reliability
  • Packaging Power Modules and ICs
  • Hard-Switched and Soft-Switched Applications and Analysis
  • Gate Drivers and Other Auxiliary Circuits
  • High-Performance Passive Components
  • Applications in Renewable Energy and Energy Storage Systems, Transportation, Industrial Drives, and Grid Power Systems

Area Attractions:

The conference is located minutes away from many famous attractions including: Fox Theatre; Margaret Mitchell House; World of Coca-Cola; Georgia Aquarium; Piedmont Park; Ferst Center for the Arts; Centennial Olympic Park; Skyview Atlanta Ferris Wheel, CNN's Headquarters, High Museum of Art, Atlanta Botanical Gardens, and the Martin Luther King Center.

Sports fans can make arrangements to see the Atlanta Hawks, the city's NBA team, or Atlanta United during their visit.  Tours are available of Mercedes-Benz Stadium; home of the Atlanta Falcons and Atlanta United.  Furthermore, the city offers many beautiful and challenging golf courses.  In the case of inclement weather, attendees can tour the College Football Hall of Fame.


For questions and concerns about the workshop, please contact one of the members of the organizing committee.  We look forward to seeing you this fall in Atlanta, Georgia.

  • Maryam Saeedifard,  General Chair, Georgia Tech
  • Victor Veliadis,  Vice-Chair, NC State/Power America
  • Dong Cao, Technical Program Co-Chair, North Dakota State University
  • Mahshid Amirabadi,  Technical Program  Co-Chair,  Northeastern University
  • Khurram Afridi,  Technical Program Co-Chair, University of Colorado – Boulder
  • Sandeep Bahl, Technical Program Co-Chair, Texas Instruments
  • Eric Persson,  Plenary Sessions Chair, Infineon
  • Babak Parkhideh,  Treasurer, North Carolina - Charlotte,
  • Karthik Kandasamy,  Local Organizing Committee, Georgia Tech
  • Suman Debnath,  Tutorials Co-Chair, Oak Ridge National Laboratory
  • Jiangchao Qin,  Tutorials Co-Chair, Arizona State University
  • Mark Scott,  Publicity Chair, Miami University
  • Shyh-Chiang Shen,  Publications Chair, Georgia Tech
  • Lingxiao Xue,  Website Chair, Navitas Semiconductor
  • Stephen Oliver,  PSMA Rep., Navitas Semiconductor
Provided by
Mark Scott
WiPDA 2018 Publicity Chair
  Mark Scott


WIPDA 2017 Overview
Posted: 2017-12-31

The 5th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA, www.wipda.org), sponsored by IEEE and PSMA, was successfully held from Oct. 30 to Nov. 1, 2017, at the Hyatt Regency Tamaya Resort near Albuquerque, NM.

WIPDA is a fast-growing annual event which provides a forum for device scientists, circuit designers, and application engineers to share technology updates, research findings, development experience, and application knowledge. 
As in past years, WiPDA covered a wide range of topics related to wide-bandgap power electronics, including but not limited to:

  1. Heteroepitaxial and bulk materials growth
  2. Gate dielectrics and surface passivation
  3. Device structures and fabrication techniques
  4. Device characterization and modeling
  5. Very high efficiency and compact converters
  6. SOAs including short-circuit, spike, and transient tolerance
  7. Harsh environment (e.g. high temperature) operation and reliability
  8. Packaging, power modules, and ICs
  9. Hard-switched and soft-switched applications
  10. Common-mode and EMI management
  11. Gate drive and other auxiliary circuits
  12. High-performance passive components
  13. Applications in renewable energy and storage, transportation, industrial drives, and grid power systems

The number of WIPDA attendees has grown quickly over the last five years, with attendees coming from multiple disciplines including materials science, device fabrication, power circuits, and system applications. Over 200 attendees participated in the workshop this year, including representatives from industry, academia, government, and research institutions. Attendees came from the United States as well as numerous other countries. Nine industrial and institutional partners provided support to the conference.

WiPDA 2017 maintained the arrangement from previous years and included tutorials, keynote talks, panel discussions, oral technical sessions, a poster session and banquet, standards meetings, and an exhibition.


There were seven tutorials covering both device and application topics, from fundamental knowledge to the frontier research trends. The tutorial speakers were from both academic institutions (Purdue University, North Carolina State University, Virginia Tech, and University of Alabama) and industry (John Deere, Texas Instruments, and Infineon Technologies). The WIPDA 2017 keynote sessions featured eight distinguished speakers from ARPA-E, Navitas Semiconductor, University of Illinois Urbana-Champaign, U.S. Army Research Laboratory, PowerAmerica, Ford, Infineon, and Texas Instruments, who shared their experiences and visions on SiC and GaN development and applications from different angles as the device manufacturer, the equipment designer, the researcher, and the system integrator. Additionally, two panel sessions focused on high-voltage SiC and high-frequency GaN, and included leading experts from US federal agencies, industry, and academia. The technical program consisted of 50 oral presentations and 21 posters, representing 10 countries. Each presentation or poster will be available on IEEE Xplore.

This year's poster session and banquet were held at the Cottonwoods Pavilion, located on the Tamaya grounds along the banks of the Rio Grande River. Further, IEEE's International Technology Roadmap for Wide Bandgap Semiconductors (ITRW) working group met at the workshop. Finally, an exhibition consisting of ten different companies and agencies paticipanted in WIPDA2017.

As in past years, WiPDA again provided student travel grants to encourage student participation in the conference and promote education in the area of wide-bandgap power electronics. 16 students received these awards, out of a total of 60 student participants, supported equally by PELS and PSMA.

WiPDA 2018 will be hosted by Georgia Tech in Atlanta, and is tentatively scheduled for November 5-7, 2018. Please check www.wipda.org for information and updates. We look forward to your participation at next year's exciting event!

Provided by Dr. Fang Luo,
Publicity Chair WiPDA 2017




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