Semiconductor Forum

Semiconductor Info & Resources
for the Power Electronics Industry.

Work in Progress

The following articles are to be reviewed. We will add links after they have been reviewed:

Articles for review:

Dynamic Input Characteristics of a MOSPOWER FET Switch (AN79-3)
Driving MOSPOWER FETs (AN79-4)
Using Power MOSFET Transistors to Interface From IC Logic to High Power Loads (AN79-6)
MOSPOWER FETS--A Key to the Advancement of SMPS Technology (AN80-1)
MOSPOWER Semiconductors (TA82-2)
Bipolar and MOS Transistors: Emerging Partners for the 1980's (TA82-3)
Using Power MOSFETs as High-Efficiency Synchronous & Bridge Rectifiers in Switch-Mode Power Supplies (TA83-1)
Boost Op-Amp Output Power With Complementary Power MOSFETs (AN83-5)
Frequency Response Analysis of the MOSFET Source Follower (AN83-8)
Safe Operating Area and Thermal Design for MOSPOWER Transistors (AN83-10)
Correlating the Charge-Transfer Characteristics of Power MOSFETs With Switching Speed (TA83-3)
Understanding MOSPOWER Transistor Characteristics Minimizes Income
Testing Requirements (TA84-1)
MOSPOWER Moves In On Low-Voltage Rectification (AN84-2)
Power MOSFETs and Radiation Environments (TA84-3)
dV/dt Turn-On in MOSFETs (TA84-4)
Parallel Operation of Power MOSFETS (TA84-5)
MOSPOWER in Motor Drives--Modern Bridge Conventions (AN86-2)
Unclamped Inductive Switching--Rugged MOSFETs for Rugged Environments (AN89-6)
New Fast-Recovery Power MOSFETs Increase High-Voltage Motor Drive Efficiency (AN89-7)
Designing with Complementary Power MOSFETs in Surface-Mount (SO-8) Packages (AN90-4)
Low-Voltage Motor Drive Designs Using n-Channel Half-Bridges (AN90-6)

[1] David G. Morrison, "Distributed Power Movers To Intermediate Voltage Bus," Electronic Design, Sept. 16, 2002, P. 55
• [2] "DirectFET™ - A Proprietary New Source Mounted Power Package for Board Mounted Power." Andrew Sawle et al, PCIM Europe 2001, presented at Nürnberg, Germany.
• [3] International Rectifier Application Note 1035, "DirectFET™ Technology: Board Mounting Guidelines."
• [4] International Rectifier Application Note 1054, "DirectFET™ Technology: Board Layout Guidelines." www.irf.com/product-info/hexfet/directfet.htm
• [5] New packaging technology doubles current density again, Carl Blake, September 2003
• [6] Power MOSFET Basics, International Rectifier web site (www.irf.com), V Barkhordarian, International Rectifier, El Segundo, Ca.
• [7] International Rectifier Application Note 1005, "avalanche." www.irf.com/product-info/an-1005.htm
• [8] International Rectifier Application Note 1033, "temp rise calculator." www.irf.com/product-info/an-1033.htm
• [9] International Rectifier datasheet IRF7811A, "IRF7811A www.irf.com/product-info/hexfet/IRF7811A.htm
• [10] "Bi-directional FlipFETTM MOSFETs for cell Phone Battery Protection Circuits." M Pavier et al, PCIM Europe 2001, presented at Nurnberg, Germany.
• [11] "High Current Voltage Regulator Module (VRM) Uses DirectFETTM MOSFETs to Achieve Current Densities of 25 A/in2 at 1 MHz to Power 32-bit Servers". Carl Blake et al, Power Systems World, October 2002
• [12] "DirectFETTM Technology: A Mechanically robust Surface Mount Technology". Andrew Sawle et al, Power Electronics Conference, May 2002
• [13] "Turn-off Failure on MOSFETs," D.L. Blackburn, Power Electronics Specialists Conference Records, pp. 429-435, 1985
• [14] "High-Voltage MOSFET Behavior in Soft-Switching Converter: Analysis and Reliability Improvements," Leo Saro, Richard Redl, Kenneth Dierberger, International Tel-communication Conference, San Francisco, 1998.
• [15] Milan M. Jovanovic, et al., "Zero-Voltage Switching Technique In High-Frequency Off-Line Converters," IEEE Proceedings of Applied Power Electronics Conference, pp 23-32, 1988
• [16] "Improving the Full Bridge Phase-shift ZVT Converter for Failure-Free Operation Under Extreme Conditions in Welding and Similar Applications," Hubert Aigner, et al., IEEE proceedings of Industrial Applications Society Annual Meeting, St Louis, 1998.
• [17] "The Do's and Don'ts of Using Power HEXFETs ®," Brian R. Pelly, International Rectifier Application note 936A
• [18] "Cd/dt Induced Turn-On in Synchronous Buck Regulators," Thomas Wu, International Rectifier
• [19] "Thermal design seminar", C Blake, Chris Schaffer, Intel Technology Symposium, San Jose, 2003
• [20] "Thermal design seminar", C Blake, Power Systems World, Chicago, Il, Nov 2004
• [21] "IGBT or MOSFET: Choose Wisely", Carl Blake, Chris Bull, International Rectifier.